1)A thick slab of p-type Si (many occasions thicker than the diffusion size Ln ) with zero.52 Ωcm bulk resistivity is illuminated. For a uniform technology profile within the slab of 10 19 electron-hole pairs/(cm Three s), if the minority provider lifetime is 500 µs, and the floor recombination velocity is 200 cm/s, calculate the next:
(a) Utilizing the charts beneath, what are the doping focus and majority-carrier
(b) Additionally utilizing the charts beneath, what are the minority-carrier mobility, diffusion coefficient, and diffusion size?
(c) What’s the extra minority-carrier focus Δn removed from the floor?
(d) What’s Δn on the floor?
(e) Ranging from the minority-carrier diffusion equation, derive an expression for the surplus minority-carrier focus Δn as a perform of distance from the floor.
(f) What’s the flux of minority electrons recombining on the floor (per unit floor space, per unit time)?
(g) What’s the flux of minority electrons within the bulk flowing towards the floor at x = 2 L n (per unit floor space, per unit time)?
(h) What’s the flux of minority electrons at x = 10 L n ?
(i) What’s the flux of minority electrons at x = 100 L n ?
2. An abrupt GaAs n+ p junction has doping ranges of N D = 1 × 10 18 cm -Three and N A = 2 × 10 16 cm-Three . Within the n-type emitter: µ p =160 cm2 /Vs and τ p = zero.2 ns. Within the p-type base: µ n =6000 cm2 /Vs and τ n = 1 ns. At 300Okay, kT/q = zero.02585 V.
For a continuing technology price G with respect to place within the diode:
(a) Derive the J-V relationship resulting from minority electrons within the p-type base.
(b) What’s the diode saturation present density resulting from minority electron recombination within the p-type base?
(c) Derive the J-V relationship for minority holes within the n-type emitter.
(d) What’s the diode saturation present density resulting from minority gap recombination within the n-type emitter?
(e) What’s the photogenerated present within the space-charge area of thickness W?
(f) What’s the total J-V relationship together with all elements of the diode? Please specific your reply such that J is constructive for a photo voltaic cell in ahead bias (technology phrases constructive, recombination phrases unfavourable).
(g) Assuming negligible recombination within the space-charge area, what’s the total diode saturation present density of the photo voltaic cell?
(h) What’s the built-in voltage V bi of the junction?
(i) For utilized voltage V a = V bi /2, calculate the injected minority provider currents on the edges of the depletion area. What are the injected minority provider concentrations at zero µm and 1 µm into the majority areas?
(j) For utilized voltage V a = – V bi /2, calculate the injected (depleted) minority provider concentrations on the edges of the majority areas. Calculate the minority provider currents on the edges of the depletion areas.
(ok)At what worth of V a and the place within the diode will the idea of “low-level injection” first be violated, excluding the space-charge area? Use the criterion of the minority provider reaching 10% of the bulk provider focus as the brink for violating the idea of low-level injection.
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